Effet of radiations on optoelectronic technologies 

PhD student: Geoffrey Ciachera

ABSTRACT
Whether in space, particle accelerators, or nuclear reactors, optoelectronic devices are exposed to radiation-rich environments that alter their properties, change their behaviour, and can induce failures with potentially dramatic consequences. Nevertheless, optoelectronic devices remain essential and are playing an increasingly important role due to their ability to convert light into electrical energy and vice versa, enabling, for instance, satellite power supply (solar cells) or energy transmission via light ("Power over Fiber").
In this context, it is crucial to understand how different types of radiation (gamma rays, X-rays, electrons, or protons) modify the properties of optoelectronic devices and what consequences these modifications have on the operation of the systems that uses them.
The objective of this doctoral thesis is to identify the mechanisms involved in the modification of optoelectronic components subjected to radiation.
To achieve this, we will develop and implement an irradiation/characterization protocol for optoelectronic devices. The devices will be characterized during irradiation by different types of particles (high-energy photons, protons, electrons) to highlight the radiation-induced degradations they undergo during their missions.
This experimental approach will be applied to various optoelectronic components, including light-emitting diodes and parts of optical power transmission systems (laser diodes, optical fibers, and phototransducers). Fully assembled systems will also be studied to identify, under real operating conditions, the interactions between the components most affected by radiation-induced modifications.
These studies will help clarify the degradation mechanisms of optoelectronic components and systems operating in radiation environments and will open up research opportunities for more complex systems.




 
 


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